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| Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier. EB C 1 = COLLECTOR 2 = BASE 3 = EMITTER 123 ABSOLUTE MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Base Current - Continuous Peak Power Dissipation @ Ta=25C Derate above 25C Power Dissipation @ Tc=25C Derate above 25C Operating And Storage Junction Temperature Range Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9 CTN636 CTN638 CTN640 VCBO VCEO VEBO IC ICM IB IBM PD PD Tj ,Tstg 45 45 60 60 5 1 1.5 100 200 750 6 2.5 20 -55 to +150 100 80 - Units V V V A A mA mA mW mW/C W mW/C C Continental Device India Limited Data Sheet Page 1 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise specified) Characteristic Collector-Emitter Voltage IC=10mA, IB =0 Collector-Base Voltage IC=100A, I E=0 Emitter-Base Voltage IE=10A, IC=0 Collector Cutoff Current VCB =30V, IE =0 VCB =30V, IE =0, Ta=125C Base Emitter On Voltage IC=500mA, V CE=2V Collector-Emitter (Sat) Voltage IC=500mA, IB =50mA D.C. Current Gain IC=5mA, VCE=2V IC=150mA, VCE=2V* IC=500mA, VCE=2V* DYNAMIC CHARACTERISTICS Input Capacitance VBE=0.5V, IC=0, NPN f=1MHz PNP Input Capacitance VCB =10V, IC=0, f=1MHz Transition Frequency IC=10mA, V CE=5V, f=35MHz NPN PNP NPN PNP 635, 636 637, 638 639, 640 635, 636 637, 638 639, 640 635, 637, 639, 636 638 640 Symbol BVCEO Min. 45 60 80 45 60 100 5 - Typ. - Max. Unit 100 10 V V V V V V V nA A BVCBO BVEBO ICBO VBE(on)* - 1.0 V VCE(sat)* hFE 25 40 40 25 - 0.5 V 160 160 - Cib - 50 110 7 9 130 50 - pF pF pF pF MHz MHz C ob fT * Pulse Test: Pulse width 300s, Duty cycle 2%. Continental Device India Limited Data Sheet Page 2 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 DC Current Gain VCE = 2V hFE - Current Gain IC Collector Current (mA) Current Gain Bandwidth Product fT - Current Gain Bandwidth Product (MHz) VCE = 2V IC Collector Current (mA) Saturation and On Voltages VBEsat at IC/IB = 10 VBEon at V CE = 2V Voltage (v) VCEsat at IC /IB = 10 IC Collector Current (mA) Continental Device India Limited Data Sheet Page 3 of 4 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 4 of 4 |
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